unisonic technologies co., ltd mje13001 npn silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r201-055.e npn silicon power transistor ? features * collector-base voltage: v (br)cbo =600v * collector current: i c =0.2a lead-free: mje13001l halogen-free: mje13001g ? ordering information ordering number pin assignment normal lead free halogen free package 1 2 3 packing mje13001-x-t92-b mje13001l-x- t92-b mje13001g-x-t92-b to-92 b c e tape box mje13001-x-t92-k mje13001l-x- t92-k mje13001g-x-t92-k to-92 b c e bulk mje13001l-x-t92-b (1)packing type (2)package type (4)lead plating (1) b: tape box, k: tape box (2) t92: to-92 (4) g: halogen free, l: lead free, blank: pb/sn (3) x: refer to classification of h fe (3)rank
mje13001 npn silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r201-055.e ? absolute maximum ratings parameter symbol ratings unit collector-emitter voltage v ceo 400 v collector-base voltage v cbo 600 v emitter base voltage v ebo 7 v collector current i c 200 ma collector power dissipation p c 750 mw junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =100 a, i e =0 600 v collector-emitter breakdown voltage bv ceo i c =1ma, i b =0 400 v emitter-base breakdown voltage bv ebo i e =100 a, i c =0 7 v base-emitter voltage v be i e =100 ma 1.1 v collector cutoff cut-off current i cbo v cb =600v,i e =0a 100 a collector emitter cut-off current i ceo v ce =400v, i b =0 200 a emitter cutoff cut-off current i ebo v eb =7v, i c =0a 100 a on characteristics h fe1 * v ce =20 v, i c =20ma 10 70 dc current gain h fe2 v ce =10v, i c =0.25ma 5 collector-emitter satu ration voltage v ce(sat) i c =50ma, i b =10ma 0.5 v base-emitter satura tion voltage v be(sat) i c =50ma, i b =10ma 1.2 v small-signal characteristics current gain bandwidth product f t i c =20ma, v ce =20v, f=1mhz 8 mhz resistive load storage time t s 1.5 s fall time t f i c =50ma, i b1 =-i b2 =5ma, v cc =45v 0.3 s ? classification of h fe1 * rank a b c d e f g h i j k l range 10-15 15-20 20-25 25-30 30-35 35-40 40-45 45-50 50-55 55-60 60-65 65-70
mje13001 npn silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r201-055.e ? typical characteristics collecter current,i c (ma) dc current gain,h fe saturation voltage,v be(sat) ,v ce(sat) capacitance,c ob (pf) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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